A large use of silicon microstrip detectors is foreseen for the intermediate part of the CMS tracker. A specific research and development program has been carried out with the aim of finding design layouts and technological solutions for allowing silicon microstrip detectors to be reliably used on a high radiation level environment. As a result of this work single sided, AC-coupled, polysilicon biased, 300 μn thick, p + on n substrate detectors were chosen. Irradiation tests have been performed on prototypes up to fluence 2 × 10 14 n/cm 2. The detector performances do not significantly change if the detectors are biased well above the depletion voltage. S/N is reduced by less than 20%, still enough to insure a good efficiency and space resolution. Multiguard structures has been developed in order to reach high voltage operation (above 500 V). © 1999 Published by Elsevier Science B.V. All rights reserved.

Test results of heavily irradiated Si detectors

BASTI, ANDREA;MESSINEO, ALBERTO MARIA;TONELLI, GUIDO EMILIO;
1999-01-01

Abstract

A large use of silicon microstrip detectors is foreseen for the intermediate part of the CMS tracker. A specific research and development program has been carried out with the aim of finding design layouts and technological solutions for allowing silicon microstrip detectors to be reliably used on a high radiation level environment. As a result of this work single sided, AC-coupled, polysilicon biased, 300 μn thick, p + on n substrate detectors were chosen. Irradiation tests have been performed on prototypes up to fluence 2 × 10 14 n/cm 2. The detector performances do not significantly change if the detectors are biased well above the depletion voltage. S/N is reduced by less than 20%, still enough to insure a good efficiency and space resolution. Multiguard structures has been developed in order to reach high voltage operation (above 500 V). © 1999 Published by Elsevier Science B.V. All rights reserved.
1999
Albergo, S.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Bartalini, P.; Basti, Andrea; Biggeri, U.; Bilei, G. M.; Bisello, D.; Boem...espandi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/168313
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