We irradiated with photons from a Co-60 source a double-sided d.c.-coupled silicon strip detector and several test structures fabricated at CSEM. We measured the leakage currents and the interstrip and backside capacitances. Up to a maximum dose of 1 Mrad, the current densities are always below 350 nA/cm(2) mostly due to thermally generated surface currents. The interstrip capacitances increase at most 17% with respect to not irradiated detectors, while the backside capacitances do not change.
|Autori:||Batignani G; Bosisio L; Carpinelli M; Diaconu C; Elmer P; Forti F; Giorgi MA; Rizzo G; Triggiani G|
|Titolo:||Results on double-sided dc-coupled silicon strip detectors irradiated with photons up to 1 Mrad|
|Anno del prodotto:||1996|
|Digital Object Identifier (DOI):||10.1007/BF02773517|
|Appare nelle tipologie:||1.1 Articolo in rivista|