We irradiated with photons from a Co-60 source a double-sided d.c.-coupled silicon strip detector and several test structures fabricated at CSEM. We measured the leakage currents and the interstrip and backside capacitances. Up to a maximum dose of 1 Mrad, the current densities are always below 350 nA/cm(2) mostly due to thermally generated surface currents. The interstrip capacitances increase at most 17% with respect to not irradiated detectors, while the backside capacitances do not change.

Results on double-sided dc-coupled silicon strip detectors irradiated with photons up to 1 Mrad

BATIGNANI, GIOVANNI;CARPINELLI, MASSIMO;FORTI, FRANCESCO;GIORGI, MARCELLO;RIZZO, GIULIANA;TRIGGIANI, GIUSEPPE
1996

Abstract

We irradiated with photons from a Co-60 source a double-sided d.c.-coupled silicon strip detector and several test structures fabricated at CSEM. We measured the leakage currents and the interstrip and backside capacitances. Up to a maximum dose of 1 Mrad, the current densities are always below 350 nA/cm(2) mostly due to thermally generated surface currents. The interstrip capacitances increase at most 17% with respect to not irradiated detectors, while the backside capacitances do not change.
Batignani, Giovanni; Bosisio, L; Carpinelli, Massimo; Diaconu, C; Elmer, P; Forti, Francesco; Giorgi, Marcello; Rizzo, Giuliana; Triggiani, Giuseppe
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11568/175949
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? 3
social impact