We irradiated with photons from a Co-60 source a double-sided d.c.-coupled silicon strip detector and several test structures fabricated at CSEM. We measured the leakage currents and the interstrip and backside capacitances. Up to a maximum dose of 1 Mrad, the current densities are always below 350 nA/cm(2) mostly due to thermally generated surface currents. The interstrip capacitances increase at most 17% with respect to not irradiated detectors, while the backside capacitances do not change.
Results on double-sided dc-coupled silicon strip detectors irradiated with photons up to 1 Mrad
BATIGNANI, GIOVANNI;CARPINELLI, MASSIMO;FORTI, FRANCESCO;GIORGI, MARCELLO;RIZZO, GIULIANA;TRIGGIANI, GIUSEPPE
1996-01-01
Abstract
We irradiated with photons from a Co-60 source a double-sided d.c.-coupled silicon strip detector and several test structures fabricated at CSEM. We measured the leakage currents and the interstrip and backside capacitances. Up to a maximum dose of 1 Mrad, the current densities are always below 350 nA/cm(2) mostly due to thermally generated surface currents. The interstrip capacitances increase at most 17% with respect to not irradiated detectors, while the backside capacitances do not change.File in questo prodotto:
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