I-V DC characteristics have been measured on metal/porous-silicon structures. In particular, the measurements on metal/free-standing porous-silicon film/metal devices confirmed the result, already obtained, that the metal/porous-silicon interface plays a crucial role in the transport of any device. Four-contacts measurements on free-standing layers showed that the current linearly depends on the voltage and that the conduction process is thermally activated, the activation energy depending on the porous silicon film production parameters. Finally, annealing experiments performed in order to improve the conduction of rectifiyng contacts, are described.

Current-Voltage Characteristics of Porous Silicon Structures

DILIGENTI, ALESSANDRO;NANNINI, ANDREA;PENNELLI, GIOVANNI;PIERI, FRANCESCO;PELLEGRINI, VITTORIO;FUSO, FRANCESCO;ALLEGRINI, MARIA
1996

Abstract

I-V DC characteristics have been measured on metal/porous-silicon structures. In particular, the measurements on metal/free-standing porous-silicon film/metal devices confirmed the result, already obtained, that the metal/porous-silicon interface plays a crucial role in the transport of any device. Four-contacts measurements on free-standing layers showed that the current linearly depends on the voltage and that the conduction process is thermally activated, the activation energy depending on the porous silicon film production parameters. Finally, annealing experiments performed in order to improve the conduction of rectifiyng contacts, are described.
Diligenti, Alessandro; Nannini, Andrea; Pennelli, Giovanni; Pieri, Francesco; Pellegrini, Vittorio; Fuso, Francesco; Allegrini, Maria
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11568/176170
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