We have designed and fabricated double-sided a.c.-coupled silicon strip detectors on high-resistivity substrates. We discuss the first electrical measurements on a 16 cm(2) strip detector. These detectors are biased via polysilicon resistors on both sides and the decoupling capacitors are integrated on the strip themselves. For a large fraction of the fabricated detectors, the current densities are about 15 nA/cm(2) and the yield of the integrated capacitor is about 99%, without any sign of breakdown up to 100 V (the maximum voltage we have applied).

Results on double-sided ac-coupled silicon strip detectors

BATIGNANI, GIOVANNI;FORTI, FRANCESCO;GIORGI, MARCELLO;RIZZO, GIULIANA;
1996-01-01

Abstract

We have designed and fabricated double-sided a.c.-coupled silicon strip detectors on high-resistivity substrates. We discuss the first electrical measurements on a 16 cm(2) strip detector. These detectors are biased via polysilicon resistors on both sides and the decoupling capacitors are integrated on the strip themselves. For a large fraction of the fabricated detectors, the current densities are about 15 nA/cm(2) and the yield of the integrated capacitor is about 99%, without any sign of breakdown up to 100 V (the maximum voltage we have applied).
1996
Batignani, Giovanni; Bosisio, L; Dellamarina, R; Elmer, P; Forti, Francesco; Giorgi, Marcello; Rampino, G; Rizzo, Giuliana; Tritto, S.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/176192
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