A fabrication process, compatible with an industrial bipolar+complementary metal-oxide-semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n(+)/p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. (C) 2001 American Institute of Physics.
Integrated porous-silicon light-emitting diodes: a fabrication process using graded doping profiles
BARILLARO, GIUSEPPE;DILIGENTI, ALESSANDRO;PIERI, FRANCESCO;FUSO, FRANCESCO;ALLEGRINI, MARIA
2001-01-01
Abstract
A fabrication process, compatible with an industrial bipolar+complementary metal-oxide-semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n(+)/p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. (C) 2001 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
