The Charge Collection Efficiency (CCE) for heavily irradiated silicon devices has been carefully investigated on a series of microstrip detectors. Large-area sensors designed for the CMS silicon tracker have been irradiated with neutrons and protons up to a very high fluence. Effects on CCE have been studied using a beam of minimum ionizing particles and a fast shaping time electronics similar to what is expected in CMS. The paper shows the performance of the sensors for CCE and Signal-to-Noise ratio (S/N) under different operating conditions. (C) 2001 Elsevier Science B.V. All rights reserved.
Comprehensive study of the effects of irradiation on charge collection efficiency in silicon detectors
MESSINEO, ALBERTO MARIA;TONELLI, GUIDO EMILIO;
2001-01-01
Abstract
The Charge Collection Efficiency (CCE) for heavily irradiated silicon devices has been carefully investigated on a series of microstrip detectors. Large-area sensors designed for the CMS silicon tracker have been irradiated with neutrons and protons up to a very high fluence. Effects on CCE have been studied using a beam of minimum ionizing particles and a fast shaping time electronics similar to what is expected in CMS. The paper shows the performance of the sensors for CCE and Signal-to-Noise ratio (S/N) under different operating conditions. (C) 2001 Elsevier Science B.V. All rights reserved.File in questo prodotto:
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