The Charge Collection Efficiency (CCE) for heavily irradiated silicon devices has been carefully investigated on a series of microstrip detectors. Large-area sensors designed for the CMS silicon tracker have been irradiated with neutrons and protons up to a very high fluence. Effects on CCE have been studied using a beam of minimum ionizing particles and a fast shaping time electronics similar to what is expected in CMS. The paper shows the performance of the sensors for CCE and Signal-to-Noise ratio (S/N) under different operating conditions. (C) 2001 Elsevier Science B.V. All rights reserved.

Comprehensive study of the effects of irradiation on charge collection efficiency in silicon detectors

MESSINEO, ALBERTO MARIA;TONELLI, GUIDO EMILIO;
2001-01-01

Abstract

The Charge Collection Efficiency (CCE) for heavily irradiated silicon devices has been carefully investigated on a series of microstrip detectors. Large-area sensors designed for the CMS silicon tracker have been irradiated with neutrons and protons up to a very high fluence. Effects on CCE have been studied using a beam of minimum ionizing particles and a fast shaping time electronics similar to what is expected in CMS. The paper shows the performance of the sensors for CCE and Signal-to-Noise ratio (S/N) under different operating conditions. (C) 2001 Elsevier Science B.V. All rights reserved.
2001
Borrello, L; Dell'Orso, R; Dutta, S; Gennai, S; Mariani, M; Messineo, ALBERTO MARIA; Segneri, G; Starodumov, A; Teodorescu, L; Tonelli, GUIDO EMILIO; ...espandi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/177083
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