The Charge Collection Efficiency (CCE) for heavily irradiated silicon devices has been carefully investigated on a series of microstrip detectors. Large-area sensors designed for the CMS silicon tracker have been irradiated with neutrons and protons up to a very high fluence. Effects on CCE have been studied using a beam of minimum ionizing particles and a fast shaping time electronics similar to what is expected in CMS. The paper shows the performance of the sensors for CCE and Signal-to-Noise ratio (S/N) under different operating conditions. (C) 2001 Elsevier Science B.V. All rights reserved.
|Autori interni:||MESSINEO, ALBERTO MARIA|
TONELLI, GUIDO EMILIO
|Autori:||Borrello L; Dell'Orso R; Dutta S; Gennai S; Mariani M; Messineo A; Segneri G; Starodumov A; Teodorescu L; Tonelli G; Verdini PG|
|Titolo:||Comprehensive study of the effects of irradiation on charge collection efficiency in silicon detectors|
|Anno del prodotto:||2001|
|Digital Object Identifier (DOI):||10.1016/S0168-9002(00)01200-6|
|Appare nelle tipologie:||1.1 Articolo in rivista|