We present the developments in a research program aimed at the realization of silicon micro-strip detectors with front-end electronics integrated in a high resistivity substrate to be used in high-energy physics, space and medical/industrial imaging applications. We report on the fabrication process developed at IRST (Trento, Italy), the characterization of the basic wafer parameters and measurements of the relevant working characteristics of the integrated transistors and related test structures. (C) 2002 Elsevier Science B.V. All rights reserved.
Design and characterization of integrated front-end transistors in a micro-strip detector technology
ANGELINI, CARLO;BATIGNANI, GIOVANNI;BETTARINI, STEFANO;FORTI, FRANCESCO;GIORGI, MARCELLO;RIZZO, GIULIANA;
2002-01-01
Abstract
We present the developments in a research program aimed at the realization of silicon micro-strip detectors with front-end electronics integrated in a high resistivity substrate to be used in high-energy physics, space and medical/industrial imaging applications. We report on the fabrication process developed at IRST (Trento, Italy), the characterization of the basic wafer parameters and measurements of the relevant working characteristics of the integrated transistors and related test structures. (C) 2002 Elsevier Science B.V. All rights reserved.File in questo prodotto:
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