The cellular power transistors are affected by the so- called hot spot phenomenon, a current crowding within few cells occurring for high power conditions, which decreases the device operating range. The onset of this phenomenon was studied under a wide range of electrical and thermal boundary conditions by means of a fast electro-thermal simulation procedure operating in the steady-state regime and using explicit analytical relationships for the temperature mapping. Furthermore, the results of experimental electrical characterizations performed on some samples were in agreement with the foreseen data.
Study of Hot-Spot Phenomena in Cellular Power Transistors by Analytical Electro-Thermal Simulation
BAGNOLI, PAOLO EMILIO;DI PASCOLI, STEFANO;
2002-01-01
Abstract
The cellular power transistors are affected by the so- called hot spot phenomenon, a current crowding within few cells occurring for high power conditions, which decreases the device operating range. The onset of this phenomenon was studied under a wide range of electrical and thermal boundary conditions by means of a fast electro-thermal simulation procedure operating in the steady-state regime and using explicit analytical relationships for the temperature mapping. Furthermore, the results of experimental electrical characterizations performed on some samples were in agreement with the foreseen data.File in questo prodotto:
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