We have investigated the depletion voltage changes, leakage current increase and charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BABAR Silicon Vertex Tracker (SVT) after heavy nonuniform irradiation. A full SVT module with the front-end electronics connected has been irradiated with a 0.9 GeV electron beam up to a peak fluence of 3.5 x10(14) e(-)/cm(2), well beyond the level causing substrate type inversion. We have irradiated the silicon with a nonuniform profile having sigma = 1.4 mm that simulates the conditions encountered in the BABAR experiment by the modules intersecting the horizontal machine plane. The position dependence of the charge collection properties and the depletion voltage have been investigated in detail using a 1060 nm LED and an innovative measuring technique based only on the digital output of the chip.
Measurement of the charge collection efficiency after heavy non-uniform irradiation in BABAR silicon detectors
BETTARINI, STEFANO;CALDERINI, GIOVANNI;Ford F;GIORGI, MARCELLO;RIZZO, GIULIANA
2005-01-01
Abstract
We have investigated the depletion voltage changes, leakage current increase and charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BABAR Silicon Vertex Tracker (SVT) after heavy nonuniform irradiation. A full SVT module with the front-end electronics connected has been irradiated with a 0.9 GeV electron beam up to a peak fluence of 3.5 x10(14) e(-)/cm(2), well beyond the level causing substrate type inversion. We have irradiated the silicon with a nonuniform profile having sigma = 1.4 mm that simulates the conditions encountered in the BABAR experiment by the modules intersecting the horizontal machine plane. The position dependence of the charge collection properties and the depletion voltage have been investigated in detail using a 1060 nm LED and an innovative measuring technique based only on the digital output of the chip.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.