We designed and fabricated a novel monolithic active pixel sensor (MAPS), in STMicrolectronics 0.13 mu m CMOS technology, exploiting the triple well option to implement, at the pixel level, a more complex signal processor and to increase the size of the charge collecting electrode with respect to previously developed CMOS MAPS. This was possible using the deep n-well, available in triple well technology, as a sensing electrode and placing, in the same physical area, part of the readout electronics. The signal processing chain, implemented in the elementary cell, includes a low noise charge preamplifier, a shaper, a discriminator and a latch. The first prototype chips have been successfully tested with very encouraging results. In this work we present the performance of the front-end electronics and the response of the sensor to ionizing radiation. (c) 2006 Elsevier B.V. All rights reserved.

A novel monolithic active pixel detector in 0.13 mu m triple well CMOS technology with pixel level analog processing

RIZZO, GIULIANA;BETTARINI, STEFANO;CALDERINI, GIOVANNI;FORTI, FRANCESCO;GIORGI, MARCELLO;
2006

Abstract

We designed and fabricated a novel monolithic active pixel sensor (MAPS), in STMicrolectronics 0.13 mu m CMOS technology, exploiting the triple well option to implement, at the pixel level, a more complex signal processor and to increase the size of the charge collecting electrode with respect to previously developed CMOS MAPS. This was possible using the deep n-well, available in triple well technology, as a sensing electrode and placing, in the same physical area, part of the readout electronics. The signal processing chain, implemented in the elementary cell, includes a low noise charge preamplifier, a shaper, a discriminator and a latch. The first prototype chips have been successfully tested with very encouraging results. In this work we present the performance of the front-end electronics and the response of the sensor to ionizing radiation. (c) 2006 Elsevier B.V. All rights reserved.
Rizzo, Giuliana; Bettarini, Stefano; Calderini, Giovanni; Cenci, R; Forti, Francesco; Giorgi, Marcello; Morsani, F; Ratti, L; Speziali, V; Manghisoni, M; Re, V; Traversi, G; Bosisio, L.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11568/181318
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 37
  • ???jsp.display-item.citation.isi??? 32
social impact