We report on the static and dynamic behavior of BJT-based particle detectors realized on high-resistivity silicon. Several prototypes, featuring different doping profiles and geometries, have been fabricated at ITC-irst (Trento, Italy). These devices have been thoroughly characterized from the electrical viewpoint, and, in order to understand the fundamental parameters of the structure, device simulations have been performed, whose results are in very good agreement with experimental data. Preliminary functional measurements have been carried out by using a Cd-109 source excitation. (C) 2004 Elsevier B.V. All rights reserved.
Characterization of BJT-based particle detectors
BATIGNANI, GIOVANNI;BETTARINI, STEFANO;BONDIOLI, MARIO;FORTI, FRANCESCO;GIORGI, MARCELLO;
2004-01-01
Abstract
We report on the static and dynamic behavior of BJT-based particle detectors realized on high-resistivity silicon. Several prototypes, featuring different doping profiles and geometries, have been fabricated at ITC-irst (Trento, Italy). These devices have been thoroughly characterized from the electrical viewpoint, and, in order to understand the fundamental parameters of the structure, device simulations have been performed, whose results are in very good agreement with experimental data. Preliminary functional measurements have been carried out by using a Cd-109 source excitation. (C) 2004 Elsevier B.V. All rights reserved.File in questo prodotto:
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