Prototypes of ionizing radiation detectors with internal signal amplification based on the bipolar transistor effect have been fabricated at ITC-irst (Trento, Italy). Results from the electrical characterization and preliminary functional tests of the devices have been previously reported. Here, we present a more detailed investigation of the performance of this type of detector, with particular attention to their noise and rate limits. Measurements of the signal waveform and of the gain versus frequency dependence are performed by illuminating the devices with, respectively, pulsed or sinusoidally modulated IR light. Pulse height spectra of X-rays from an Am-241 source have been taken with very simple front-end electronics (an LF351 operational amplifier) or by directly reading with an oscilloscope the voltage drop across a load resistor connected to the emitter. An equivalent noise charge (referred to input) of 380 electrons r.m.s. has been obtained with the first setup for a small device, with an active area of 0.5 x 0.5 mm(2) and a depleted thickness of 0.6 mm. The corresponding power dissipation in the BIT was 17 mu W. The performance limitations of the devices are discussed. (c) 2006 Elsevier B.V. All rights reserved.
|Autori interni:||BATIGNANI, GIOVANNI|
|Autori:||Bosisio L; Batignani G; Bettarini S; Boscardin M; Dalla Betta GF; Giacomini G; Piemonte C; Verzellesi G; Zorzi N|
|Titolo:||Performance evaluation of radiation sensors with internal signal amplification based on the BJT effect|
|Anno del prodotto:||2006|
|Digital Object Identifier (DOI):||10.1016/j.nima.2006.05.270|
|Appare nelle tipologie:||1.1 Articolo in rivista|