NPN phototransistors have been fabricated on high-purity silicon substrate. The devices have been produced by ITC-IRST in the framework of a National Research Project funded by the Italian Education, University and Research Ministry (MIUR). The phototransistor emitter is composed of a phosphorus n(+) implant, the base is a diffused highenergy boron implant, and the collector is the 300 pin thick silicon bulk. Several devices have been investigated. Results with 22 keV X-ray from a Cd-109-radioactive source and visible light irradiation are presented. (C) 2003 Published by Elsevier B.V.

High-gain phototransistors on high-resistivity silicon substrate

BATIGNANI, GIOVANNI;BISOGNI, MARIA GIUSEPPINA;DEL GUERRA, ALBERTO;FORTI, FRANCESCO;GIORGI, MARCELLO;MARCHIORI, GIOVANNI;
2004-01-01

Abstract

NPN phototransistors have been fabricated on high-purity silicon substrate. The devices have been produced by ITC-IRST in the framework of a National Research Project funded by the Italian Education, University and Research Ministry (MIUR). The phototransistor emitter is composed of a phosphorus n(+) implant, the base is a diffused highenergy boron implant, and the collector is the 300 pin thick silicon bulk. Several devices have been investigated. Results with 22 keV X-ray from a Cd-109-radioactive source and visible light irradiation are presented. (C) 2003 Published by Elsevier B.V.
2004
Batignani, Giovanni; Bisogni, MARIA GIUSEPPINA; Boscardin, M; Bosisio, L; Dalla Betta, Gf; DEL GUERRA, Alberto; Dittongo, S; Forti, Francesco; Giorgi, Marcello; Han, Dj; Linsalata, S; Marchiori, Giovanni; Piemonte, C; Rachevskaia, I; Ronchin, S.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/186448
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