We report on an research and development activity aimed at the fabrication of silicon microstrip detectors with integrated front-end electronics to be used in high-energy physics and space experiments and medical/industrial imaging applications. A specially tailored fabrication technology has been developed at ITC-IRST (Trento, Italy), which allows for the production of single-sided microstrip detectors, with integrated coupling capacitors and polysilicon resistors, as well as active devices, including N-channel junction field effect transistors and N- or P-channel MOS transistors. The main characteristics of the fabrication process are outlined. Experimental results from the electrical characterization of the devices are reported, showing that transistors with good electrical figures can be obtained within the proposed technology while preserving the basic detector parameters.
A fabrication process for silicon microstrip detectors with integrated front-end electronics
BATIGNANI, GIOVANNI;GIORGI, MARCELLO;
2002-01-01
Abstract
We report on an research and development activity aimed at the fabrication of silicon microstrip detectors with integrated front-end electronics to be used in high-energy physics and space experiments and medical/industrial imaging applications. A specially tailored fabrication technology has been developed at ITC-IRST (Trento, Italy), which allows for the production of single-sided microstrip detectors, with integrated coupling capacitors and polysilicon resistors, as well as active devices, including N-channel junction field effect transistors and N- or P-channel MOS transistors. The main characteristics of the fabrication process are outlined. Experimental results from the electrical characterization of the devices are reported, showing that transistors with good electrical figures can be obtained within the proposed technology while preserving the basic detector parameters.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
