The high luminosity SuperB asymmetric e(+) e(-) collider, to be built near the INFN National Frascati Laboratory in Italy, has been designed to deliver a luminosity greater than 10(36) cm(-2) s(-1) with moderate beam currents and a reduced center of mass boost with respect to earlier B-Factories. An improved vertex resolution is required for precise time-dependent measurements and the SuperB Silicon Vertex Tracker will be equipped with an innermost layer of small radius (about 1.5 cm), resolution of 10-15 mu m in both coordinates, low material budget (<1% X0), and able to withstand a background rate of several tens of MHz/cm(2). The ambitious goal of designing a thin pixel device with these stringent requirements is being pursued with specific R&D programs on different technologies: hybrid pixels, CMOS MAPS and pixel sensors developed with vertical integration technology. The latest results on the various pixel options for the SuperB SVT will be presented. (C) 2010 Elsevier B.V. All rights reserved. RI Forti, Francesco/H-3035-2011; Neri, Nicola/G-3991-2012; Gabrielli, Alessandro/H-4931-2012; Villa, Mauro/C-9883-2009; Dalla Betta, Gian-Franco/I-1783-2012
Thin pixel development for the SuperB silicon vertex tracker
RIZZO, GIULIANA;BATIGNANI, GIOVANNI;BETTARINI, STEFANO;DELL'ORSO, MAURO;FORTI, FRANCESCO;GIORGI, MARCELLO;PAOLONI, EUGENIO;
2011-01-01
Abstract
The high luminosity SuperB asymmetric e(+) e(-) collider, to be built near the INFN National Frascati Laboratory in Italy, has been designed to deliver a luminosity greater than 10(36) cm(-2) s(-1) with moderate beam currents and a reduced center of mass boost with respect to earlier B-Factories. An improved vertex resolution is required for precise time-dependent measurements and the SuperB Silicon Vertex Tracker will be equipped with an innermost layer of small radius (about 1.5 cm), resolution of 10-15 mu m in both coordinates, low material budget (<1% X0), and able to withstand a background rate of several tens of MHz/cm(2). The ambitious goal of designing a thin pixel device with these stringent requirements is being pursued with specific R&D programs on different technologies: hybrid pixels, CMOS MAPS and pixel sensors developed with vertical integration technology. The latest results on the various pixel options for the SuperB SVT will be presented. (C) 2010 Elsevier B.V. All rights reserved. RI Forti, Francesco/H-3035-2011; Neri, Nicola/G-3991-2012; Gabrielli, Alessandro/H-4931-2012; Villa, Mauro/C-9883-2009; Dalla Betta, Gian-Franco/I-1783-2012I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
