The breakdown performance of CMS barrel module prototype detectors and test devices with single and multi-guard structures were studied before and after neutron irradiation up to 2.10(14) 1 MeV equivalent neutrons. Before irradiation avalanche breakdown occurred at the guard ring implant edges. We measured 100-300 V higher breakdown voltage values for the devices with multi-guard than for devices with single-guard ring. After irradiation and type inversion the breakdown was smoother than before irradiation and the breakdown voltage value increased to 500-600 V for most of the devices.
Autori interni: | |
Autori: | Albergo S; Angarano MM; Azzi P; Babucci E; Bacchetta N; Bader A; Bagliesi G; Basti A; Biggeri U; Bilei GM; Bisello D; Boemi D; Bosi F; Borrello L; Bozzi C; Braibant S; Breuker H; Bruzzi M; Buffini A; Busoni S; Calefato G; Candelori A; Caner A; Castaldi R; Castro A; Catacchini E; Checcucci B; Ciampolini P; Civinini C; Creanza D; D'Alessandro R; Da Rold M; Demaria N; de Palma M; Dell'Orso R; Della Marina R; Dutta S; Eklund C; Elliott-Peisert A; Feld L; Fiore L; Focardi E; French M; Freudenreich K; Furtjes A; Giassi A; Giorgi M; Giraldo A; Glessing B; Gu WH; Hall G; Hammerstrom R; Hebbeker T; Hrubec J; Huhtinen M; Kaminsky A; Karimaki V; Koenig S; Krammer M; Lariccia P; Lenzi M; Loreti M; Luebelsmeyer K; Lustermann W; Mattig P; Maggi G; Mannelli M; Mantovani G; Marchioro A; Mariotti C; Martignon G; Mc Evoy B; Meschini M; Messineo A; My S; Paccagnella A; Palla F; Pandoulas D; Papi A; Parrini G; Passeri D; Pieri M; Piperov S; Potenza R; Radicci V; Raffaelli F; Raymond M; Santocchia A; Schmitt B; Selvaggi G; Servoli L; Sguazzoni G; Siedling R; Silvestris L; Skog K; Starodumov A; Stavitski I; Stefanini G; Tempesta P; Tonelli G; Tricomi A; Tuuva T; Vannini C; Verdini PG; Viertel G; Xie Z; Li YH; Watts S; Wittmer B |
Titolo: | High-voltage breakdown studies on Si microstrip detectors |
Anno del prodotto: | 1999 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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