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EnglishThe purpose of this work is to study layout solutions aimed at increasing the breakdown voltage in silicon micro-strip detectors. Several structures with multiple floating guards in different configurations have been designed and produced on high- resistivity silicon wafers. The main electrical characteristics of these devices have been measured before and after irradiation. Both radiation-induced surface and bulk damage effects were considered as well. The highest breakdown voltage was found on devices featuring p(+) guards without field plates. A simulation study has been carried out on simplified structures to evaluate the distribution of the breakdown field as a function of the guard layout, The aim was the design optimization.
| Autori interni: | |
| Autori: | Da Rold M; Bacchetta N; Bisello D; Paccagnella A; Dalla Betta GF; Verzellesi G; Militaru O; Wheadon R; Fuochi PG; Bozzi C; Dell'Orso R; Messineo A; Tonelli G; Verdini PG |
| Titolo: | Study of breakdown effects in silicon multiguard structures |
| Anno del prodotto: | 1999 |
| Digital Object Identifier (DOI): | 10.1109/23.785736 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11568/191263
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