The purpose of this work is to study layout solutions aimed at increasing the breakdown voltage in silicon micro-strip detectors. Several structures with multiple floating guards in different configurations have been designed and produced on high- resistivity silicon wafers. The main electrical characteristics of these devices have been measured before and after irradiation. Both radiation-induced surface and bulk damage effects were considered as well. The highest breakdown voltage was found on devices featuring p(+) guards without field plates. A simulation study has been carried out on simplified structures to evaluate the distribution of the breakdown field as a function of the guard layout, The aim was the design optimization.
|Autori:||Da Rold M; Bacchetta N; Bisello D; Paccagnella A; Dalla Betta GF; Verzellesi G; Militaru O; Wheadon R; Fuochi PG; Bozzi C; Dell'Orso R; Messineo A; Tonelli G; Verdini PG|
|Titolo:||Study of breakdown effects in silicon multiguard structures|
|Anno del prodotto:||1999|
|Digital Object Identifier (DOI):||10.1109/23.785736|
|Appare nelle tipologie:||1.1 Articolo in rivista|