Free-standing yttria-stabilized zirconium oxide membranes were fabricated by means of two different processes which are compatible with the standard complementary metal oxide semiconductor technology. The membrane is a thin film suspended on a pyramid-shape hole obtained on a silicon substrate by means of an anisotropic etching. A square membrane with a maximum side dimension of 170 mu m was obtained. (C) 1999 Elsevier Science S.A. All rights reserved.
Technology of integrable free-standing yttria-stabilized zirconia membranes
BRUSCHI, PAOLO;DILIGENTI, ALESSANDRO;NANNINI, ANDREA;PIOTTO, MASSIMO
1999-01-01
Abstract
Free-standing yttria-stabilized zirconium oxide membranes were fabricated by means of two different processes which are compatible with the standard complementary metal oxide semiconductor technology. The membrane is a thin film suspended on a pyramid-shape hole obtained on a silicon substrate by means of an anisotropic etching. A square membrane with a maximum side dimension of 170 mu m was obtained. (C) 1999 Elsevier Science S.A. All rights reserved.File in questo prodotto:
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