One of the main drawbacks of undoped graphene for digital electronics applications is its am-bipolar behavior. Here we study the trasfer characteristics of transistors based on boron-doped graphene nanoribbons with atomic concentrations up to 0.6%, showing that the presence of doping generates a clear electron-hole transport asymmetry. In order to obtain these results, we introduce a method to accurately reproduce density functional theory (DFT) results using a selfconsistent tight-binding (TB) model with a proper distribution of fixed charges.
|Titolo:||Electron-hole transport asymmetry in Boron-doped Graphene Field Effect Transistors|
|Anno del prodotto:||2012|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|