This work reports on the electrical (static and dynamic) as well as on the optical characteristics of a prototype matrix of Silicon Photomultipliers (SiPM). The prototype matrix consists of 4 x 4 SiPM's on the same substrat fabricated at FBK-irst (Trento, Italy). Each SiPM of the matrix has an area of 1 x 1mm(2) and it is composed of 625 microcells connected in parallel. Each microcell of the SiPM is a GM-APD (n(+)/p junction on P+ substrate) with an area of 40 x 40 mu m(2) connected in series with its integrated polysilicon quenching resistance. The static characteristics as breakdown voltage, quenching resistance, post-breakdown dark current as well as the dynamic characteristics as gain and dark count rate have been analysed. The photon detection efficiency as a function of wavelength and operation voltage has been also estimated.
|Autori:||Dinu N; Barrillon P; Bazin C; BELCARI N; Bisogni MG; Bondil-Blin S; Boscardin M; Chaumat V; Collazuol G; De La Taille C; Del Guerra A; Llosa G; Marcatili S; Melchiorri M; Piemonte C; Puill V; Tarolli A; Vagnucci JF; Zorzi N|
|Titolo:||Characteristics of a prototype matrix of Silicon PhotoMultipliers (SiPM)|
|Anno del prodotto:||2009|
|Digital Object Identifier (DOI):||10.1088/1748-0221/4/03/P03016|
|Appare nelle tipologie:||1.1 Articolo in rivista|