RuO2 thin films have been produced on silicon-based substrates by in situ pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO2-substrate interface is very thin (approximate to 3 nm), since it is not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.

Pulsed Laser Deposition and Characterization of Conductive RuO2 Thin Film

FUSO, FRANCESCO;ARIMONDO, ENNIO;PENNELLI, GIOVANNI;ALLEGRINI, MARIA
1997-01-01

Abstract

RuO2 thin films have been produced on silicon-based substrates by in situ pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO2-substrate interface is very thin (approximate to 3 nm), since it is not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.
1997
A., Iembo; Fuso, Francesco; Arimondo, Ennio; C., Ciofi; Pennelli, Giovanni; G. M., Curro'; F., Neri; Allegrini, Maria
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/198735
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