RuO2 thin films have been produced on silicon-based substrates by in situ pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO2-substrate interface is very thin (approximate to 3 nm), since it is not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.
|Autori interni:||FUSO, FRANCESCO|
|Autori:||A. IEMBO; F. FUSO; E. ARIMONDO; C. CIOFI; G. PENNELLI; G.M. CURRO'; F. NERI; M. ALLEGRINI|
|Titolo:||Pulsed Laser Deposition and Characterization of Conductive RuO2 Thin Film|
|Anno del prodotto:||1997|
|Digital Object Identifier (DOI):||10.1557/JMR.1997.0195|
|Appare nelle tipologie:||1.1 Articolo in rivista|