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EnglishThe effects of electromigration in metal thin films is studied by means of atomistic Monte Carlo simulations. The simulator is based on a model of atom diffusion particularly suited to deal with polycrystalline three-dimensional films. Interatomic interactions are estimated by means of a simplified Morse potential while the driving force exerted by the charge carrier flux is represented as a perturbation on the diffusion activation barrier. The local current density is calculated using an equivalent resistor network. The results of simulated stress applied to various samples including a triple point are presented demonstrating the possibility of reproducing the initial stage of void formation with an atomistic model. (C) 2000 Elsevier Science B.V. All rights reserved.
| Autori interni: | |
| Autori: | BRUSCHI P; NANNINI A; PIOTTO M |
| Titolo: | Three-dimensional Monte Carlo simulations of electromigration in polycrystalline metal films |
| Anno del prodotto: | 2000 |
| Digital Object Identifier (DOI): | 10.1016/S0927-0256(00)00041-0 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11568/203602
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