The effects of electromigration in metal thin films is studied by means of atomistic Monte Carlo simulations. The simulator is based on a model of atom diffusion particularly suited to deal with polycrystalline three-dimensional films. Interatomic interactions are estimated by means of a simplified Morse potential while the driving force exerted by the charge carrier flux is represented as a perturbation on the diffusion activation barrier. The local current density is calculated using an equivalent resistor network. The results of simulated stress applied to various samples including a triple point are presented demonstrating the possibility of reproducing the initial stage of void formation with an atomistic model. (C) 2000 Elsevier Science B.V. All rights reserved.
Autori interni: | |
Autori: | BRUSCHI P; NANNINI A; PIOTTO M |
Titolo: | Three-dimensional Monte Carlo simulations of electromigration in polycrystalline metal films |
Anno del prodotto: | 2000 |
Digital Object Identifier (DOI): | 10.1016/S0927-0256(00)00041-0 |
Appare nelle tipologie: | 1.1 Articolo in rivista |