The effects of electromigration in metal thin films is studied by means of atomistic Monte Carlo simulations. The simulator is based on a model of atom diffusion particularly suited to deal with polycrystalline three-dimensional films. Interatomic interactions are estimated by means of a simplified Morse potential while the driving force exerted by the charge carrier flux is represented as a perturbation on the diffusion activation barrier. The local current density is calculated using an equivalent resistor network. The results of simulated stress applied to various samples including a triple point are presented demonstrating the possibility of reproducing the initial stage of void formation with an atomistic model. (C) 2000 Elsevier Science B.V. All rights reserved.
Three-dimensional Monte Carlo simulations of electromigration in polycrystalline metal films
BRUSCHI, PAOLO;NANNINI, ANDREA;PIOTTO, MASSIMO
2000
Abstract
The effects of electromigration in metal thin films is studied by means of atomistic Monte Carlo simulations. The simulator is based on a model of atom diffusion particularly suited to deal with polycrystalline three-dimensional films. Interatomic interactions are estimated by means of a simplified Morse potential while the driving force exerted by the charge carrier flux is represented as a perturbation on the diffusion activation barrier. The local current density is calculated using an equivalent resistor network. The results of simulated stress applied to various samples including a triple point are presented demonstrating the possibility of reproducing the initial stage of void formation with an atomistic model. (C) 2000 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
