The effects of electromigration in metal thin films is studied by means of atomistic Monte Carlo simulations. The simulator is based on a model of atom diffusion particularly suited to deal with polycrystalline three-dimensional films. Interatomic interactions are estimated by means of a simplified Morse potential while the driving force exerted by the charge carrier flux is represented as a perturbation on the diffusion activation barrier. The local current density is calculated using an equivalent resistor network. The results of simulated stress applied to various samples including a triple point are presented demonstrating the possibility of reproducing the initial stage of void formation with an atomistic model. (C) 2000 Elsevier Science B.V. All rights reserved.
|Autori interni:||BRUSCHI, PAOLO|
|Autori:||BRUSCHI P; NANNINI A; PIOTTO M|
|Titolo:||Three-dimensional Monte Carlo simulations of electromigration in polycrystalline metal films|
|Anno del prodotto:||2000|
|Digital Object Identifier (DOI):||10.1016/S0927-0256(00)00041-0|
|Appare nelle tipologie:||1.1 Articolo in rivista|