A vacuum microdiode with a moving anode was fabricated by means of a new process requiring only two mask levels and only one critical etching step. The cathode, with a pyramidal shape, was made by anisotropically etching p silicon through a mask formed by the anode itself, which, at the end of the process, consists of a SiO2 suspended membrane supporting an Al layer. The process is compatible with standard complementary metal-oxide-semiconductor technology. I-V characteristics were measured under vacuum verifying also that the diode current is sensitive to visible light irradiation and to changes of the anode-to-cathode distance. A minimum anode-cathode distance of about 5000 Angstrom was obtained. (C) 1998 American Vacuum Society. [S0734-211X(98)03902-X].

Fabrication of a silicon-vacuum field-emission microdiode with a moving anode

BRUSCHI, PAOLO;DILIGENTI, ALESSANDRO;NANNINI, ANDREA;PIOTTO, MASSIMO
1998

Abstract

A vacuum microdiode with a moving anode was fabricated by means of a new process requiring only two mask levels and only one critical etching step. The cathode, with a pyramidal shape, was made by anisotropically etching p silicon through a mask formed by the anode itself, which, at the end of the process, consists of a SiO2 suspended membrane supporting an Al layer. The process is compatible with standard complementary metal-oxide-semiconductor technology. I-V characteristics were measured under vacuum verifying also that the diode current is sensitive to visible light irradiation and to changes of the anode-to-cathode distance. A minimum anode-cathode distance of about 5000 Angstrom was obtained. (C) 1998 American Vacuum Society. [S0734-211X(98)03902-X].
Bruschi, Paolo; Diligenti, Alessandro; Iani, F; Nannini, Andrea; Piotto, Massimo
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11568/204286
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? 4
social impact