Copper thin films have been deposited by means of three different techniques. Transmission electron microscopy analysis and electrical characterization revealed that the three types of film had different average grain size and resistivity. The two different contributions to the total resistivity, due to the scattering at the grain boundaries and at the intragranular defects, have been separated by using the Mayadas-Shatzkes theory. Microstructural analysis, electrical characterization, noise measurements, and lifetime tests have been performed in order to identify the deposition technique which leads to the most reliable interconnection lines.
|Autori:||Bruschi, Paolo; Ciofi, Carmine; Dattilo, V; Diligenti, Alessandro; Nannini, Andrea; Neri, Bruno|
|Titolo:||Copper metallization for integrated circuits: TEM analysis and electrical characterization|
|Anno del prodotto:||1997|
|Digital Object Identifier (DOI):||10.1007/s11664-997-0283-5|
|Appare nelle tipologie:||1.1 Articolo in rivista|