We provide a set of parameters for second-neighbor tight-binding model Hamiltonians, including spin-orbit interaction, in silicon and germanium. Our attempt is the construction of a simple Hamiltonian, useful as a stepping stone for the description of more complex systems. We introduce a criterion for establishing transferable scaling laws of the parameters. The results obtained, checked versus determination of deformation potentials under hydrostatic and uniaxial [001] stress, indicate a clear deviation from the d-2 Harrison scaling law.
Tight binding model and interactions scaling laws for Silicon and Germanium
GROSSO, GIUSEPPE;
1995-01-01
Abstract
We provide a set of parameters for second-neighbor tight-binding model Hamiltonians, including spin-orbit interaction, in silicon and germanium. Our attempt is the construction of a simple Hamiltonian, useful as a stepping stone for the description of more complex systems. We introduce a criterion for establishing transferable scaling laws of the parameters. The results obtained, checked versus determination of deformation potentials under hydrostatic and uniaxial [001] stress, indicate a clear deviation from the d-2 Harrison scaling law.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.