We provide a set of parameters for second-neighbor tight-binding model Hamiltonians, including spin-orbit interaction, in silicon and germanium. Our attempt is the construction of a simple Hamiltonian, useful as a stepping stone for the description of more complex systems. We introduce a criterion for establishing transferable scaling laws of the parameters. The results obtained, checked versus determination of deformation potentials under hydrostatic and uniaxial [001] stress, indicate a clear deviation from the d-2 Harrison scaling law.

Tight binding model and interactions scaling laws for Silicon and Germanium

GROSSO, GIUSEPPE;
1995

Abstract

We provide a set of parameters for second-neighbor tight-binding model Hamiltonians, including spin-orbit interaction, in silicon and germanium. Our attempt is the construction of a simple Hamiltonian, useful as a stepping stone for the description of more complex systems. We introduce a criterion for establishing transferable scaling laws of the parameters. The results obtained, checked versus determination of deformation potentials under hydrostatic and uniaxial [001] stress, indicate a clear deviation from the d-2 Harrison scaling law.
Grosso, Giuseppe; Piermarocchi, C.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/206128
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? 51
social impact