We provide a set of parameters for second-neighbor tight-binding model Hamiltonians, including spin-orbit interaction, in silicon and germanium. Our attempt is the construction of a simple Hamiltonian, useful as a stepping stone for the description of more complex systems. We introduce a criterion for establishing transferable scaling laws of the parameters. The results obtained, checked versus determination of deformation potentials under hydrostatic and uniaxial [001] stress, indicate a clear deviation from the d-2 Harrison scaling law.
Autori interni: | |
Autori: | Grosso G; Piermarocchi C |
Titolo: | Tight binding model and interactions scaling laws for Silicon and Germanium |
Anno del prodotto: | 1995 |
Digital Object Identifier (DOI): | 10.1103/PhysRevB.51.16772 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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