Time integrated and time resolved photoluminescence measurements have been performed at room temperature on porous silicon samples prepared under identical conditions but processed after anodization in four different wats. New and simple treatments were made to reduce the structural damage due to the drying process. The results show that suitable conditions exist to substantially improve the optical emission of porous silicon samples. The observed modifications of the time integrated photoluminescence signal are related to dangling bonds produced during the drying process that are supposed to act as trap states in the electron-hole or excitons recombination mechanism. Time resolved measurements provide an evaluation of the relative density of trap states for each analyzed sample. (C) 1995 American Institute of Physics.
|Autori:||PELLEGRINI V; FUSO F; LORENZI G; ALLEGRINI M; DILIGENTI A; NANNINI A; PENNELLI G|
|Titolo:||IMPROVED OPTICAL-EMISSION OF POROUS SILICON WITH DIFFERENT POSTANODIZATION PROCESSES|
|Anno del prodotto:||1995|
|Digital Object Identifier (DOI):||10.1063/1.114457|
|Appare nelle tipologie:||1.1 Articolo in rivista|