A new approach to monolithic pixel detectors, based on SOI wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. This paper reports on the used fabrication methods, and on the results of the electrical evaluation of the SOI - MOSFET devices and of the detector structures fabricated in the bulk. The leakage current of the high-resistivity PIN-diodes was kept in the order of 5 to 10 nA/cm2. The SOI preparation processes considered (SIMOX and ZMR) produced working electronic circuits and appear to be compatible with the fabrication of detectors of suitable quality.
INTEGRATION OF CMOS-ELECTRONICS AND PARTICLE DETECTOR DIODES IN HIGH-RESISTIVITY SILICON-ON-INSULATOR WAFERS
FORTI, FRANCESCO;
1993-01-01
Abstract
A new approach to monolithic pixel detectors, based on SOI wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. This paper reports on the used fabrication methods, and on the results of the electrical evaluation of the SOI - MOSFET devices and of the detector structures fabricated in the bulk. The leakage current of the high-resistivity PIN-diodes was kept in the order of 5 to 10 nA/cm2. The SOI preparation processes considered (SIMOX and ZMR) produced working electronic circuits and appear to be compatible with the fabrication of detectors of suitable quality.File in questo prodotto:
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