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EnglishLow frequency noise measurements have been performed on Al-Si resistors, subjected to high current density (j = 2 x 10(6) A/cm2), in order to investigate the dependence of the electromigration noise on the structural and geometrical parameters. To this end five groups of samples have been used, each characterized by a different value of the average grain size D. The power spectral density S(v) of the voltage fluctuations across the samples has been measured using test patterns with different widths w and lengths l. It has been found that S(v) shows an exponential dependence on the grain dimension and a linear dependence on the shape factor F = l/w. The model previously proposed for noise generation has been integrated to take into account the observed dependence of S(v) on D and F.
| Autori interni: | ||
| Autori: | Chicca, S; Ciofi, Carmine; Diligenti, Alessandro; Nannini, Andrea; Neri, Bruno | |
| Titolo: | DEPENDENCE OF ELECTROMIGRATION NOISE ON GEOMETRICAL AND STRUCTURAL CHARACTERISTICS IN ALUMINUM-BASED RESISTORS | |
| Anno del prodotto: | 1994 | |
| Digital Object Identifier (DOI): | 10.1109/16.333838 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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http://hdl.handle.net/11568/22767
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