We present an approach to the study of electronic states of homogeneously disordered alloys that exploits the recursion method on finite lattices in augmented spaces. In this formalism no artificial boundary is introduced and the effective Hamiltonian preserves translational symmetry. A number of approximate Hamiltonians have also been considered for the purpose of comparison. In particular we show the origin of the most important features of the alloy density of states following the properties of finite lattices with an increasing number of sites.
|Autori:||CORDELLI A; GROSSO G; PASTORI PARRAVICINI G|
|Titolo:||ELECTRONIC STATES IN ONE-DIMENSIONAL ALLOYS WITHIN THE AUGMENTED-SPACE FORMALISM|
|Anno del prodotto:||1993|
|Digital Object Identifier (DOI):||10.1103/PhysRevB.48.11567|
|Appare nelle tipologie:||1.1 Articolo in rivista|