We have measured the current matching properties of MOS transistors operated in the weak inversion region. We measured a total of about 1400 PMOS and NMOS transistors produced in four different processes and report here the results in terms of mismatch dependence on current density, device dimensions, and substrate voltage, without using any specific model for the transistor.
MEASUREMENT OF MOS CURRENT MISMATCH IN THE WEAK INVERSION REGION
FORTI, FRANCESCO;
1994-01-01
Abstract
We have measured the current matching properties of MOS transistors operated in the weak inversion region. We measured a total of about 1400 PMOS and NMOS transistors produced in four different processes and report here the results in terms of mismatch dependence on current density, device dimensions, and substrate voltage, without using any specific model for the transistor.File in questo prodotto:
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