In the exciton photoluminescence emission from a GaAs MQW sample at room temperature, a strong dependence on the incidence angle of the exciting laser light has been observed. This behaviour is originated by the polariton, i.e. the.exciton coupling to the light. Introducing into a simple rate equation model, the relation between the exciton radiative lifetime broadening and the light wavevector parallel to the MQW plane for a two dimensional system, we have predicted the population of the exciton level and the intensity of exciton emission. The predicted dependence on the incidence angle of the exciting light is in good agreement with the experimental results. This observation is the first experimental confirmation of the radiative polariton lifetime broadening in a MQW, although it represents an indirect evidence through the photoluminescence signal.
EXCITON-POLARITON MODIFICATIONS IN THE PHOTOLUMINESCENCE SPECTRUM OF GAAS MQW
FUSO, FRANCESCO;ARIMONDO, ENNIO
1994-01-01
Abstract
In the exciton photoluminescence emission from a GaAs MQW sample at room temperature, a strong dependence on the incidence angle of the exciting laser light has been observed. This behaviour is originated by the polariton, i.e. the.exciton coupling to the light. Introducing into a simple rate equation model, the relation between the exciton radiative lifetime broadening and the light wavevector parallel to the MQW plane for a two dimensional system, we have predicted the population of the exciton level and the intensity of exciton emission. The predicted dependence on the incidence angle of the exciting light is in good agreement with the experimental results. This observation is the first experimental confirmation of the radiative polariton lifetime broadening in a MQW, although it represents an indirect evidence through the photoluminescence signal.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
