The electronic structure of n - i - p - i Si superlattices is investigated by the tight-binding renormalization method. Strong anisotropy of the hole masses in the in-plane direction is found and strong localization of the electron and hole wave-functions in the growth direction is reported. For the structure studied, a type-II configuration is found with nearly zero overlap between electron and hole wave-functions. The latter property is discussed in view of its possible device applications.
|Autori interni:||GROSSO, GIUSEPPE|
|Autori:||Di Ventra M; Grosso G; Pastori Parravicini G; Piermarocchi C|
|Titolo:||Electronic structure of n-i-p-i Si superlattices|
|Anno del prodotto:||1997|
|Digital Object Identifier (DOI):||10.1088/0953-8984/9/50/002|
|Appare nelle tipologie:||1.1 Articolo in rivista|