The electronic structure of n - i - p - i Si superlattices is investigated by the tight-binding renormalization method. Strong anisotropy of the hole masses in the in-plane direction is found and strong localization of the electron and hole wave-functions in the growth direction is reported. For the structure studied, a type-II configuration is found with nearly zero overlap between electron and hole wave-functions. The latter property is discussed in view of its possible device applications.
Electronic structure of n-i-p-i Si superlattices
GROSSO, GIUSEPPE;
1997-01-01
Abstract
The electronic structure of n - i - p - i Si superlattices is investigated by the tight-binding renormalization method. Strong anisotropy of the hole masses in the in-plane direction is found and strong localization of the electron and hole wave-functions in the growth direction is reported. For the structure studied, a type-II configuration is found with nearly zero overlap between electron and hole wave-functions. The latter property is discussed in view of its possible device applications.File in questo prodotto:
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