This work presents an automated low noise measurement system purposely designed for the characterization of MOS structures of Integrated Circuits. The instrument will be used for monitoring the current tunneling in ultra thin oxide layers during lifetime tests of such devices. The aim of this type of measurement is to study the sharp current fluctuations which normally precede the dielectric breakdown. The system allows to acquire the DC and AC components of the current in two separated channels for several hours at a maximum rate of 50 kSa/s. An automated procedure for the interruption of the test just a few seconds before breakdown occurs has aso been implemented.
PC Based Low Noise Measurement System for the Chacterization of Ultra Thin Oxide MOS Devices
BASSO, GIOVANNI;NERI, BRUNO
1998-01-01
Abstract
This work presents an automated low noise measurement system purposely designed for the characterization of MOS structures of Integrated Circuits. The instrument will be used for monitoring the current tunneling in ultra thin oxide layers during lifetime tests of such devices. The aim of this type of measurement is to study the sharp current fluctuations which normally precede the dielectric breakdown. The system allows to acquire the DC and AC components of the current in two separated channels for several hours at a maximum rate of 50 kSa/s. An automated procedure for the interruption of the test just a few seconds before breakdown occurs has aso been implemented.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.