Two-dimensional atomistic simulations of the growth and post-deposition behaviour of island metal films are described. The program includes a module for the calculation of the film resistance on the basis of a charge limited tunnelling model. The dependence of the resistance on various deposition parameters is investigated. Examples of simulated post-deposition resistance drift are shown.

Simulation of the deposition and aging of thin island films

BRUSCHI, PAOLO;NANNINI, ANDREA
1998

Abstract

Two-dimensional atomistic simulations of the growth and post-deposition behaviour of island metal films are described. The program includes a module for the calculation of the film resistance on the basis of a charge limited tunnelling model. The dependence of the resistance on various deposition parameters is investigated. Examples of simulated post-deposition resistance drift are shown.
Bruschi, Paolo; Nannini, Andrea
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11568/48119
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