The paper describes the technology used for the fabrication of a set of prototypes of microstrip silicon detectors matching the requirements of the CMS inner tracking system. The detectors are single and double-sided devices featuring integrated AC coupling on both sides. Polysilicon resistors are used as bias elements and individual p-stop patterns provide isolation in between the strips on the ohmic side. The design is such that the performance of these detectors will be marginally affected by the heavy irradiation correlated to several years of running at LHC. Different dielectric layers have been used to study rigidity and yield in the integrated capacitors. Different polysilicon implant doses have been used to optimise the uniformity and to increase the reproducibility of the poly resistors. The paper describes the design choices and the results of laboratory tests on a series of devices.
|Autori:||Tonelli G; Focardi E; Wheadon RJ|
|Titolo:||Double-sided ''radiation resistant'' microstrip detectors: Technology and results|
|Anno del prodotto:||1996|
|Digital Object Identifier (DOI):||10.1016/0168-9002(96)00252-5|
|Appare nelle tipologie:||1.1 Articolo in rivista|