Hydrogen supported thermal donor (TD) formation A as observed in oxygen enriched high resistive float zone (FZ) silicon being used as substrates for detectors in the Large Hadron Collider (CERN). TD formation was provided by a "2-step-process", consisting of a plasma hydrogenation at 250 degreesC (60 min) and subsequent annealing at 450 degreesC in air (typically for 20-30 min). The samples were analyzed by spreading resistance probe (SRP), C(V) and DLTS measurements. Doping by TDs in the oxygen enriched layers of FZ Si samples might be a promising method for the creation of very deep (similar to100 mum) electrical field gradients for an improved performance of Si radiation detectors. (C) 2002 Elsevier Science B.V. All rights reserved.
Hydrogen enhanced thermal donor formation in oxygen enriched high resistive float-zone silicon
TONELLI, GUIDO EMILIO
2002-01-01
Abstract
Hydrogen supported thermal donor (TD) formation A as observed in oxygen enriched high resistive float zone (FZ) silicon being used as substrates for detectors in the Large Hadron Collider (CERN). TD formation was provided by a "2-step-process", consisting of a plasma hydrogenation at 250 degreesC (60 min) and subsequent annealing at 450 degreesC in air (typically for 20-30 min). The samples were analyzed by spreading resistance probe (SRP), C(V) and DLTS measurements. Doping by TDs in the oxygen enriched layers of FZ Si samples might be a promising method for the creation of very deep (similar to100 mum) electrical field gradients for an improved performance of Si radiation detectors. (C) 2002 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
