Hydrogen supported thermal donor (TD) formation A as observed in oxygen enriched high resistive float zone (FZ) silicon being used as substrates for detectors in the Large Hadron Collider (CERN). TD formation was provided by a "2-step-process", consisting of a plasma hydrogenation at 250 degreesC (60 min) and subsequent annealing at 450 degreesC in air (typically for 20-30 min). The samples were analyzed by spreading resistance probe (SRP), C(V) and DLTS measurements. Doping by TDs in the oxygen enriched layers of FZ Si samples might be a promising method for the creation of very deep (similar to100 mum) electrical field gradients for an improved performance of Si radiation detectors. (C) 2002 Elsevier Science B.V. All rights reserved.
|Autori interni:||TONELLI, GUIDO EMILIO|
|Autori:||Job R; Ulyashin AG; Fahrner WR; Simoen E; Claeys C; Tonelli G|
|Titolo:||Hydrogen enhanced thermal donor formation in oxygen enriched high resistive float-zone silicon|
|Anno del prodotto:||2002|
|Digital Object Identifier (DOI):||10.1016/S0168-583X(01)00894-1|
|Appare nelle tipologie:||1.1 Articolo in rivista|