We present a novel additive process, which allows the spatially controlled integration of nanoparticles (NPs) inside silicon surfaces. The NPs are placed between a conductive stamp and a silicon surface; by applying a bias voltage a SiO2 layer grows underneath the stamp protrusions, thus embedding the particles. We report the successful nanoembedding of CoFe2O 4 nanoparticles patterned in lines, grids and logic structures. © The Royal Society of Chemistry 2010.
Additive nanoscale embedding of functional nanoparticles on silicon surface
PINEIDER, FRANCESCO;
2010-01-01
Abstract
We present a novel additive process, which allows the spatially controlled integration of nanoparticles (NPs) inside silicon surfaces. The NPs are placed between a conductive stamp and a silicon surface; by applying a bias voltage a SiO2 layer grows underneath the stamp protrusions, thus embedding the particles. We report the successful nanoembedding of CoFe2O 4 nanoparticles patterned in lines, grids and logic structures. © The Royal Society of Chemistry 2010.File in questo prodotto:
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