We investigate the performances of double-gate n-doped Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) based on As and Sb monolayers through multi-scale simulations, ranging from ab-initio DFT calculations (by means of the Quantum ESPRESSO and Wannier90 codes) to transport device simulations (using the quantum simulation code NanoTCAD ViDES). Such simulations has allowed us to provide deep physical insights of the mechanisms at play. In particular, our findings suggest that, for gate length down to 5 nm, these devices exhibit satisfactory figures of merit in terms of on-current/off-current ratio, as well as speed (i.e. both intrinsic delay time and cut-off frequency) and power dissipation (good dynamic power indicator) as compared to Industry requirements. Tunneling effects can however strongly degrade off-currents, due to the transparency of the channel potential barrier, especially for the shorter considered devices. However, the ultimately thin body channel effectively manages to suppress short-channel effects despite the extreme scaling. In conclusion, we believe that monolayer As and Sb-based MOSFETs are promising candidates for next-generation devices.
Arsenene and Antimonene as new candidates for next-generation devices
DIB, ELIAS;IANNACCONE, GIUSEPPE;FIORI, GIANLUCA
2016-01-01
Abstract
We investigate the performances of double-gate n-doped Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) based on As and Sb monolayers through multi-scale simulations, ranging from ab-initio DFT calculations (by means of the Quantum ESPRESSO and Wannier90 codes) to transport device simulations (using the quantum simulation code NanoTCAD ViDES). Such simulations has allowed us to provide deep physical insights of the mechanisms at play. In particular, our findings suggest that, for gate length down to 5 nm, these devices exhibit satisfactory figures of merit in terms of on-current/off-current ratio, as well as speed (i.e. both intrinsic delay time and cut-off frequency) and power dissipation (good dynamic power indicator) as compared to Industry requirements. Tunneling effects can however strongly degrade off-currents, due to the transparency of the channel potential barrier, especially for the shorter considered devices. However, the ultimately thin body channel effectively manages to suppress short-channel effects despite the extreme scaling. In conclusion, we believe that monolayer As and Sb-based MOSFETs are promising candidates for next-generation devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
