We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep 2-dimensional electron system. At low graphene-oxide inter-layer bias, the two electron systems are electrically isolated, despite their small spatial separation. A very efficient reciprocal gating of the two neighboring 2-dimensional systems is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic field-effects and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly coupled bilayer systems is discussed.

Tunnel and electrostatic coupling in graphene-LaAlO3/SrTiO3 hybrid systems

Polini M.;RODDARO, STEFANO
2016

Abstract

We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep 2-dimensional electron system. At low graphene-oxide inter-layer bias, the two electron systems are electrically isolated, despite their small spatial separation. A very efficient reciprocal gating of the two neighboring 2-dimensional systems is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic field-effects and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly coupled bilayer systems is discussed.
Aliaj, I.; Torre, I.; Miseikis, V.; di Gennaro, E.; Sambri, A.; Gamucci, A.; Coletti, C.; Beltram, F.; Granozio, F. M.; Polini, M.; Pellegrini, V.; Roddaro, Stefano
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11568/834176
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