Tunable and mode-locked laser operation near 2 µm based on different Tm-doped YAG ceramics, 4 at.% and 10 at.%, is demonstrated. Several designs of GaSb-based surface-quantum-well SESAMs are characterized and studied as saturable absorbers for mode-locking. Best mode-locking performance was achieved using an antireflection-coated near-surface quantum-well SESAM, resulting in a pulse duration of ~3 ps and ~150 mW average output power at 89 MHz. All mode-locked Tm:YAG ceramic lasers operated at 2012 nm, with over 133 nm demonstrated tuning for continuous-wave operation.

GaSb-based SESAM mode-locked Tm:YAG ceramic laser at 2 µm

TONELLI, MAURO;
2015

Abstract

Tunable and mode-locked laser operation near 2 µm based on different Tm-doped YAG ceramics, 4 at.% and 10 at.%, is demonstrated. Several designs of GaSb-based surface-quantum-well SESAMs are characterized and studied as saturable absorbers for mode-locking. Best mode-locking performance was achieved using an antireflection-coated near-surface quantum-well SESAM, resulting in a pulse duration of ~3 ps and ~150 mW average output power at 89 MHz. All mode-locked Tm:YAG ceramic lasers operated at 2012 nm, with over 133 nm demonstrated tuning for continuous-wave operation.
Gluth, Alexander; Wang, Yicheng; Petrov, Valentin; Paajaste, Jonna; Suomalainen, Soile; Härkönen, Antti; Guina, Mircea; Steinmeyer, Günter; Mateos, Xavier; Veronesi, Stefano; Tonelli, Mauro; Li, Jiang; Pan, Yubai; Guo, Jingkun; Griebner, Uwe
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11568/841315
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