Tunable and mode-locked laser operation near 2 µm based on different Tm-doped YAG ceramics, 4 at.% and 10 at.%, is demonstrated. Several designs of GaSb-based surface-quantum-well SESAMs are characterized and studied as saturable absorbers for mode-locking. Best mode-locking performance was achieved using an antireflection-coated near-surface quantum-well SESAM, resulting in a pulse duration of ~3 ps and ~150 mW average output power at 89 MHz. All mode-locked Tm:YAG ceramic lasers operated at 2012 nm, with over 133 nm demonstrated tuning for continuous-wave operation.
GaSb-based SESAM mode-locked Tm:YAG ceramic laser at 2 µm
TONELLI, MAURO;
2015-01-01
Abstract
Tunable and mode-locked laser operation near 2 µm based on different Tm-doped YAG ceramics, 4 at.% and 10 at.%, is demonstrated. Several designs of GaSb-based surface-quantum-well SESAMs are characterized and studied as saturable absorbers for mode-locking. Best mode-locking performance was achieved using an antireflection-coated near-surface quantum-well SESAM, resulting in a pulse duration of ~3 ps and ~150 mW average output power at 89 MHz. All mode-locked Tm:YAG ceramic lasers operated at 2012 nm, with over 133 nm demonstrated tuning for continuous-wave operation.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
oe-23-2-1361.pdf
accesso aperto
Tipologia:
Versione finale editoriale
Licenza:
Tutti i diritti riservati (All rights reserved)
Dimensione
1.24 MB
Formato
Adobe PDF
|
1.24 MB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
