We describe a numerical method which allows to self-consistently simulate the effect of boron doping in graphene-based field-effect-transistors, using a tight-binding description with a proper distribution of fixed charges. Using this simulation technique, we show, in the case of field-effect transistors based on narrow graphene nanoribbons, that low boron doping concentrations generate a clear electron-hole asymmetry in the transfer characteristics of the device.
Effect of boron doping on the characteristics of graphene FETs
MARCONCINI, PAOLO;LOGOTETA, DEMETRIO;
2012-01-01
Abstract
We describe a numerical method which allows to self-consistently simulate the effect of boron doping in graphene-based field-effect-transistors, using a tight-binding description with a proper distribution of fixed charges. Using this simulation technique, we show, in the case of field-effect transistors based on narrow graphene nanoribbons, that low boron doping concentrations generate a clear electron-hole asymmetry in the transfer characteristics of the device.File in questo prodotto:
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