High-sensitive ultrathin negative electron beam resist based on Langmuir-Blodgett films of polycyanoacrylate

We carried out an electron-beam lithography study of the sub-mm performances of Langmuir-Blodgett films of Polycyanoacrylates fabricated by the Langmuir-Schaefer technique. We tested the sensitivity of films made by 48 monolayers, finding a dose of less than 1 mC/cm2, and employed them as masks for wet etching of Cr metal layers, with resolutions up to 100 nm. These results suggest that the modified Langmuir-Schaefer technique, and the Polycyanoacrylate-based resists, are very promising for nanotechnology applications.