We carried out an electron-beam lithography study of the sub-mm performances of Langmuir-Blodgett films of Polycyanoacrylates fabricated by the Langmuir-Schaefer technique. We tested the sensitivity of films made by 48 monolayers, finding a dose of less than 1 mC/cm2, and employed them as masks for wet etching of Cr metal layers, with resolutions up to 100 nm. These results suggest that the modified Langmuir-Schaefer technique, and the Polycyanoacrylate-based resists, are very promising for nanotechnology applications.
High-sensitive ultrathin negative electron beam resist based on Langmuir-Blodgett films of polycyanoacrylate
PISIGNANO, DARIO
2004-01-01
Abstract
We carried out an electron-beam lithography study of the sub-mm performances of Langmuir-Blodgett films of Polycyanoacrylates fabricated by the Langmuir-Schaefer technique. We tested the sensitivity of films made by 48 monolayers, finding a dose of less than 1 mC/cm2, and employed them as masks for wet etching of Cr metal layers, with resolutions up to 100 nm. These results suggest that the modified Langmuir-Schaefer technique, and the Polycyanoacrylate-based resists, are very promising for nanotechnology applications.File in questo prodotto:
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