In this work, we propose a fabrication process for a single-electron transistor on silicon. The process is developed on silicon on insulator wafer and it is based on electron beam lithography and KOH anisotropic etching. A structure composed by a small silicon isle connected to the leads by channels with triangular cross-section is obtained. Channel dimensions have been reduced by oxidation and the substrate has been used as backgate. Preliminary I-V characteristics show phenomena of charge/discharge at room temperature. (c) 2006 Elsevier B.V. All rights reserved.
Silicon single-electron transistor fabricated by anisotropic etch and oxidation
PENNELLI, GIOVANNI;Piotto M;BARILLARO, GIUSEPPE
2006-01-01
Abstract
In this work, we propose a fabrication process for a single-electron transistor on silicon. The process is developed on silicon on insulator wafer and it is based on electron beam lithography and KOH anisotropic etching. A structure composed by a small silicon isle connected to the leads by channels with triangular cross-section is obtained. Channel dimensions have been reduced by oxidation and the substrate has been used as backgate. Preliminary I-V characteristics show phenomena of charge/discharge at room temperature. (c) 2006 Elsevier B.V. All rights reserved.File in questo prodotto:
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