We present an edge-light emitting diode based on highly doped Ge/Si μ-strips starined by a SiN top stressor. The device, manufactured in a BiCMOS pilot line, shows RT NIR electroluminescence in a spectral region extending from the C- to the U-telecom bands and beyond.
A NIR-LED based on tensile strained, heavily doped Ge/Si μ-strips fabricated in a BiCMOS pilot line
Virgilio, M.;
2017-01-01
Abstract
We present an edge-light emitting diode based on highly doped Ge/Si μ-strips starined by a SiN top stressor. The device, manufactured in a BiCMOS pilot line, shows RT NIR electroluminescence in a spectral region extending from the C- to the U-telecom bands and beyond.File in questo prodotto:
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