We study a memristive circuit with included parasitic elements, such as capacitance and inductance. In the multiple-scale scheme, we analytically show how the parasitic elements afect the voltage and the current. Finally, we provide an analytical expression for the intersection point coordinates, through which we discuss the functional behavior of the pinched hysteresis loop versus the operating frequency and the parasitic elements.
Analytical Study on the Influence of Parasitic Elements in a Memristor
Bernardo TelliniUltimo
2018-01-01
Abstract
We study a memristive circuit with included parasitic elements, such as capacitance and inductance. In the multiple-scale scheme, we analytically show how the parasitic elements afect the voltage and the current. Finally, we provide an analytical expression for the intersection point coordinates, through which we discuss the functional behavior of the pinched hysteresis loop versus the operating frequency and the parasitic elements.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
