The disclosure provides porous silicon light-emitting device and its manufacturing method.Luminescent device (1) includes: semiconductor body (2), has the first conductivity-type, has positive side (2a) and dorsal surface (2b)；Porous Silicon area (10) extends at positive side (2a) in semiconductor body (2)；And cathode zone (8), it is directly laterally contacted with Porous Silicon area (10).Luminescent device further comprises the barrier region (12) of electrically insulating material, barrier region (12) directly contact extends at the bottom side of cathode zone with cathode zone (8), so that in use, the lateral part that electric current exclusively passes through cathode zone (8) flows in the semiconductor body.
Porous-silicon light-emitting device and its manufacturing method
BARILLARO GIUSEPPE;
2016-01-01
Abstract
The disclosure provides porous silicon light-emitting device and its manufacturing method.Luminescent device (1) includes: semiconductor body (2), has the first conductivity-type, has positive side (2a) and dorsal surface (2b)；Porous Silicon area (10) extends at positive side (2a) in semiconductor body (2)；And cathode zone (8), it is directly laterally contacted with Porous Silicon area (10).Luminescent device further comprises the barrier region (12) of electrically insulating material, barrier region (12) directly contact extends at the bottom side of cathode zone with cathode zone (8), so that in use, the lateral part that electric current exclusively passes through cathode zone (8) flows in the semiconductor body.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
