We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detectors and test structures show a good overall quality of the processed wafers. After irradiation with 24 GeV/c protons up to 4 x 10(14) cm(-2) the characterisation of n-on-p and p-on-n MCz Si sensors with the C-V method show a decrease of the full depletion voltage and no space charge sign inversion. Microscopic characterisation has been performed to study the role of thermal donors in Czochralski Si. No evidence of thermal donor activation was observed in n-type MCz Si detectors if contact sintering was performed at a temperature lower than 380 degrees C and the final passivation oxide was omitted. (c) 2005 Published by Elsevier B.V.
|Autori:||Bruzzi M; Bisello D; Borrello L; Borchi E; Boscardin M; Candelori A; Creanza D; Dalla Betta GFD; DePalma M; Dittongo S; Focardi E; Khomenkov V; Litovchenko A; Macchiolo A; Manna N; Menichelli D; Messineo A; Miglio S; Petasecca M; Piemonte C; Pignatel GU; Radicci V; Ronchin S; Scaringella M; Segneri G; Sentenac D; Tosi C; Zorzi N|
|Titolo:||Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon|
|Anno del prodotto:||2005|
|Digital Object Identifier (DOI):||10.1016/j.nima.2005.06.001|
|Appare nelle tipologie:||1.1 Articolo in rivista|