It is widely believed that carrier-density inhomogeneities (“electron-hole puddles”) in single-layer graphene on a substrate such as quartz are due to charged impurities located close to the graphene sheet. Here we demonstrate by using a Kohn-Sham-Dirac density-functional scheme that corrugations in a real sample are sufficient to determine electron-hole puddles on length scales that are larger than the spatial resolution of state-of-the-art scanning tunneling microscopy.

Electron-hole puddles in the absence of charged impurities

A. Tomadin;M. Polini
2012-01-01

Abstract

It is widely believed that carrier-density inhomogeneities (“electron-hole puddles”) in single-layer graphene on a substrate such as quartz are due to charged impurities located close to the graphene sheet. Here we demonstrate by using a Kohn-Sham-Dirac density-functional scheme that corrugations in a real sample are sufficient to determine electron-hole puddles on length scales that are larger than the spatial resolution of state-of-the-art scanning tunneling microscopy.
2012
Gibertini, M.; Tomadin, A.; Guinea, F.; Katsnelson, M. I.; Polini, M.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/984449
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