The performances of metal-semiconductor point-contact diodes as mixers in the near-infrared region were tested. Preliminary experiments were performed in order to phase-lock two diode lasers at 850 nm a few hundred gigahertz apart. GaSb, InAs, and InSb as semiconductor layers were used. The frequency bridge between the two lasers was covered by a Gunn diode frequency locked to a 1-GHz oscillator. A novel phase-lock circuit was tested on two diode lasers 72 GHz apart.

Measurements of near-infrared frequency mixing by metal-semiconductor point-contact diodes

BEVERINI, NICOLO';CARELLI, GIORGIO;MACCIONI, ENRICO;
2005-01-01

Abstract

The performances of metal-semiconductor point-contact diodes as mixers in the near-infrared region were tested. Preliminary experiments were performed in order to phase-lock two diode lasers at 850 nm a few hundred gigahertz apart. GaSb, InAs, and InSb as semiconductor layers were used. The frequency bridge between the two lasers was covered by a Gunn diode frequency locked to a 1-GHz oscillator. A novel phase-lock circuit was tested on two diode lasers 72 GHz apart.
2005
Bava, E; Beverini, Nicolo'; Carelli, Giorgio; De Michele, A; Galzerano, G; Maccioni, Enrico; Moretti, A; Prevedelli, M; Sorrentino, F; Svelto, C.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/99121
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