We optimize and investigate extensively the sub-μA bipolar operation of scaled Al2O3- and HfO2-based RRAM cells using carefully thinned dielectrics and Hf scavenging layer. Although isotropic scaling favors the sub-μA operation, switching variability remains intrinsically large due to low number of involved O-vacancy switching species. The low filament temperature also accounts for slow forming/set speed. However, combining both Al2O3 and HfO2 dielectrics leads to best trade-off between switching control, memory window, speed and retention. © 2013 JSAP.

Understanding of the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation

Strangio S.;
2013-01-01

Abstract

We optimize and investigate extensively the sub-μA bipolar operation of scaled Al2O3- and HfO2-based RRAM cells using carefully thinned dielectrics and Hf scavenging layer. Although isotropic scaling favors the sub-μA operation, switching variability remains intrinsically large due to low number of involved O-vacancy switching species. The low filament temperature also accounts for slow forming/set speed. However, combining both Al2O3 and HfO2 dielectrics leads to best trade-off between switching control, memory window, speed and retention. © 2013 JSAP.
2013
978-4-86348-347-7
978-1-4673-5226-0
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/999938
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